Self-Protected High Side Driver with Temperature and Current Limit

The NCV8450/A is a fully protected High−Side Smart Discrete device with a typical RDS(on) of 1.0  and an internal current limit of 0.8 A typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. Features • Short Circuit Protection • Thermal Shutdown with

Self-Protected High Side Driver with Temperature and Current Limit

文件：153.27 Kbytes Page：9 Pages

Self-Protected High Side Driver with Temperature and Current Limit

Self-Protected High Side Driver with Temperature and Current Limit

The NCV8450/A is a fully protected High−Side Smart Discrete device with a typical RDS(on) of 1.0  and an internal current limit of 0.8 A typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. Features • Short Circuit Protection • Thermal Shutdown with

Self-Protected High Side Driver with Temperature and Current Limit

The NCV8450/A is a fully protected High−Side Smart Discrete device with a typical RDS(on) of 1.0  and an internal current limit of 0.8 A typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. Features • Short Circuit Protection • Thermal Shutdown with

Self Protected High Side Driver with Temperature and Current Limit

The NCV8450 is a fully protected High-Side Smart Discrete device with a Typical RDSOn of 1 Ohm and an internal current Limit of 0.8 A typical.The device can switch a variety of resistive, inductive, and capacitive loads. • Short Circuit Protection\n• Overvoltage Protection\n• Loss of Ground Protection\n• Slew Rate Control for Low EMI\n• AEC-Q100/101 Qualified\n;

Self-Protected High Side Driver with Temperature and Current Limit

The NCV8450/A is a fully protected High−Side Smart Discrete device with a typical RDS(on) of 1.0  and an internal current limit of 0.8 A typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. Features • Short Circuit Protection • Thermal Shutdown with

Self-Protected High Side Driver with Temperature and Current Limit

The NCV8450/A is a fully protected High−Side Smart Discrete device with a typical RDS(on) of 1.0  and an internal current limit of 0.8 A typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. Features • Short Circuit Protection • Thermal Shutdown with

Self-Protected High Side Driver

文件：88.84 Kbytes Page：9 Pages

Self-Protected High Side Driver

文件：88.84 Kbytes Page：9 Pages

Self-Protected High Side Driver with Temperature and Current Limit

文件：126.41 Kbytes Page：9 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路（IC） 配电开关，负载驱动器

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT） 描述：IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路（IC） 配电开关，负载驱动器

Self-Protected High Side Driver

文件：88.84 Kbytes Page：9 Pages

Self-Protected High Side Driver with Temperature and Current Limit

文件：126.41 Kbytes Page：9 Pages

Self-Protected High Side Driver with Temperature and Current Limit

文件：153.27 Kbytes Page：9 Pages

Automotive Multioutput Voltage Regulator

FEATURES „ 6 V to 45 V input range „ dc-to-dc buck converter with 5.7 V output „ Overcurrent protection with foldback, and undervoltage lockout (UVLO) „ Dual 5 V outputs – Digital 5 V ±2, 200 mA – Analog 5 V, 200 mA – Short-to-supply protection on analog regulator – Analog to digital regul

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

500Volt, 0.45Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internat

REPETITIVE AVALANCHE AND dv/dt RATED

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

HEXFET TRANSISTOR

500Volt, 0.45Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internationa

Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)