Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

N- and P-Channel 60-V (D-S) MOSFET

文件：2.53354 Mbytes Page：14 Pages

Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

Dual E nhancement Mode Field Effect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

N- and P-Channel 60-V (D-S) MOSFET

文件：2.53352 Mbytes Page：14 Pages

Dual E nhancement Mode Field Effect Transistor (N and P Channel)

Automotive Multioutput Voltage Regulator

FEATURES „ 6 V to 45 V input range „ dc-to-dc buck converter with 5.7 V output „ Overcurrent protection with foldback, and undervoltage lockout (UVLO) „ Dual 5 V outputs – Digital 5 V ±2, 200 mA – Analog 5 V, 200 mA – Short-to-supply protection on analog regulator – Analog to digital regul

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

500Volt, 0.45Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internat

REPETITIVE AVALANCHE AND dv/dt RATED

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

HEXFET TRANSISTOR

500Volt, 0.45Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internationa