位置：首页 > IC中文资料 > NCV57080BDR2G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCV57080BDR2G | Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 |   | |
NCV57080BDR2G | Isolated High Current IGBT Gate Driver 文件：563.67 Kbytes Page：22 Pages | ONSEMI 安森美半导体 | | |
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver 文件：646.81 Kbytes Page：24 Pages | ONSEMI 安森美半导体 | |
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DdatasheetPDF页码索引
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