| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCV5700 | High Current IGBT Gate Driver 文件:329.54 Kbytes Page:18 Pages | ONSEMI 安森美半导体 | ||
NCV5700 | IGBT 门极驱动器,高电流,独立 | ONSEMI 安森美半导体 | ||
Isolated High Current IGBT Gate Driver NCV57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver NCV57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver NCV57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver NCV57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver NCV57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver NCV57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver NCV57001F is a variant of NCV57001 with reduced Soft−Turn−Off time suited to drive large IGBTs or power modules. NCV57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver NCV57001F is a variant of NCV57001 with reduced Soft−Turn−Off time suited to drive large IGBTs or power modules. NCV57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver NCV57001F is a variant of NCV57001 with reduced Soft−Turn−Off time suited to drive large IGBTs or power modules. NCV57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver 文件:230.92 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver 文件:230.92 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver 文件:230.92 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation. | ONSEMI 安森美半导体 | |||
IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver 文件:229.86 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver 文件:229.86 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver 文件:229.86 Kbytes Page:14 Pages | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver 文件:286.97 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
Isolated High Current IGBT Gate Driver 文件:286.97 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
High Current IGBT Gate Driver 文件:329.54 Kbytes Page:18 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRVR HI/LOW SIDE 16SOIC 集成电路(IC) 栅极驱动器 | ONSEMI 安森美半导体 | |||
Introduction to Knowles Precision Devices Applications RF amplifier LC Filters and Networks Broadband Wireless LAN Medical Devices Cordless and Cellular phones DR/Crystal Oscillator Microstrip line filters | KNOWLES 楼氏电子 | |||
SIL3 HART® Mux Modem for Termination Board FEATURES SIL 3 / SC 3 Installation in Zone 2/Div. 2 Up to 256 channels (extendable to 16128 with 63 multi-drop units) HART® RS-485 interface to access field smart devices Three port isolation, Field Interface/Serial Interface/Supply Simplified installation on custom Termination Boards | GMI | |||
4700 文件:48.7 Kbytes Page:1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Terminal Strip Banana Jack 文件:36.54 Kbytes Page:1 Pages | POMONA Pomona Electronics | |||
Terminal Strip Banana Jack 文件:36.54 Kbytes Page:1 Pages | 3M |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOP16 |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON |
1747+ |
SOP16 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON Sem |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON |
23+ |
SOP16 |
100 |
正规渠道,只有原装! |
|||
ON/安森美 |
24+ |
SOP16 |
1000 |
清仓价出货假一赔百只做原装 |
|||
ON |
19+ |
SOP16 |
30000 |
19+ |
|||
ON/优质原供应商 |
23+ |
SOP16 |
20000 |
||||
ON |
24+ |
SOP16 |
17120 |
原装现货,有上库存就有货,假一赔十 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
NCV5700芯片相关品牌
NCV5700规格书下载地址
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NCV5700数据表相关新闻
NCV57252DWR2G
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2021-2-3NCV551-150 mA的CMOS低Iq低压差稳压器
NCP551系列固定输出低压差线性稳压器设计为手持式通信设备和便携式电池要求低静态供电的应用。该NCP551系列设备功能的超鈭抣OW的4.0答:静态电流包含一个参考电压单元,误差放大器,一个PMOS功率晶体管,电阻设置输出电压,电流限制,并温度限制保护电路。NCP551已被设计为使用低成本的陶瓷电容器和需要一个0.1 F的最小输出电容设备采用微鈭抦iniature的TSOP鈭urface装载包。标准电压版本1.5,1.8,2.5,2.7,2.8,3.0,3.2,3.3和5.0 V电压在100 mV的步长。 特点 4.0一个典型的低静态电流
2013-1-14
DdatasheetPDF页码索引
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