High Side and Low Side Gate Driver, High-Frequency, 180V offering 0.5A source/0.8A capability

The NCP81080 is a high performance dual mosfet (high side and low side) gate-drive IC designed for driving MOSFETs operating up to 180 V. The NCP81080 integrates a driver IC and a bootstrap diode and offers 0.5A source/0.8A sink driving capability. Anti-cross conduction circuit is integrated to prev • Drives two N-Channel MOSFETs in High & Low Side\n• Bootstrap Supply Voltage Range up to 180V\n• Drives 1nF Load with Typical Rise/Fall Times of 19ns/17 ns\n• 2 ns Delay Matching (Typical)\n• Operating Junction Temperature Range of -40°C to 140°C;

High Performance Dual MOSFET Gate Driver

文件：146.45 Kbytes Page：12 Pages

High Performance Dual MOSFET Gate Driver

文件：146.45 Kbytes Page：12 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路（IC） 栅极驱动器

封装/外壳：8-VFDFN 裸露焊盘 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8DFN 集成电路（IC） 栅极驱动器

High Performance Dual MOSFET Gate Driver

文件：146.45 Kbytes Page：12 Pages

3.3V In-System Programmable SuperBIG??High Density PLD

ispLSI 8000V Family Description The ispLSI 8000V Family of Register-Intensive, 3.3V SuperBIG In-System Programmable Logic Devices is based on Big Fast Megablocks of 120 registered macro cells and a Global Routing Plane (GRP) structure interconnecting the Big Fast Megablocks. Each Big Fast Megab

Antenna Kit BWA-ANTKIT-006

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WRIST STRAPS & COIL CORDS

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