Integrated PoE-PD Interface Controller, IEEE 802.3af, 15W

The NCP1090, NCP1091 and NCP1092 are members of ON Semiconductor's high power HIPO™ Power over Ethernet Powered Device (PoE-PD) product family and integrate an IEEE 802.3af PoE-PD interface controller. • Fully supports IEEE 802.3af specifications\n• Broad compatibility with power sourcing equipment\n• 500 mA operational current limit\n• Headroom above the IEEE 802.3af power limitation\n• Industrial temperature range -40°C to 85°C with full operation up to 125°C junction temperature\n• Extended ope;

Integrated IEEE 802.3af PoE-PD Interface Controller

文件：176.22 Kbytes Page：12 Pages

Integrated IEEE 802.3af PoE-PD Interface Controller

文件：176.22 Kbytes Page：12 Pages

Integrated IEEE 802.3af PoE-PD Interface Controller

文件：176.22 Kbytes Page：12 Pages

Integrated IEEE 802.3af PoE-PD Interface Controller

文件：176.22 Kbytes Page：12 Pages

Integrated IEEE 802.3af PoE-PD Interface Controller

文件：176.22 Kbytes Page：12 Pages

封装/外壳：8-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC POE CNTRL 1 CHANNEL 8TSSOP 集成电路（IC） 以太网供电（PoE）控制器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC POE CNTRL 1 CHANNEL 8SOIC 集成电路（IC） 以太网供电（PoE）控制器

SWITCHMODE??Power Rectifiers

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 60 to 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guara

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

11-Output Configurable Clock Buffer

TriQuint’s TQ1090 is a configurable clock buffer which generates 11 outputs, operating over a wide range of frequencies from 33 MHz to 45MHz, 65 MHz to 90 MHz and 130 MHz to 180 MHz. The outputs are available at 1x, 2x and 4x, or at 1/2x, 1x and 2x, or at 1/4 x, 1/2 x and 1x the reference clock fr