丝印代码：NCEP40T11；NCE N-Channel Super Trench Power MOSFET

Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-

30-250V N-Channel SGT-I MOSFET

丝印代码：NCEP40T11AK；NCE N-Channel Super Trench Power MOSFET

Description The NCEP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

丝印代码：NCEP40T11G；N-Channel Super Trench Power MOSFET

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30-250V N-Channel SGT-I MOSFET

30-250V N-Channel SGT-I MOSFET

丝印代码：AP40T11AG；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

丝印代码：AP40T11AK；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

丝印代码：AP40T11G；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

丝印代码：AP40T11K；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

LCE N-Channel Super Trench Power MOSFET

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