30-120V N-Channel SGT-II MOSFET

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：GT023N10；N-Channel Enhancement Mode Power MOSFET

Description The GT023N10TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

丝印代码：AP023N10LL；NCE Automotive N-Channel Super Trench II Power MOSFET

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal