NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

12-300V N-Channel Automotive MOSFET

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM ① • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Aut

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5µs SCSOA • Square RBSOA • 100 of The Parts Tested for ILM ① • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Aut

JST PH 4-Pin Socket to Color Coded Cable - 200mm

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800 TO 4000 MHz TO-8 CASCADABLE AMPLIFIER

文件：179.68 Kbytes Page：2 Pages

STM32F3 series in-application programming

文件：391.96 Kbytes Page：16 Pages