丝印代码：LNCE60P05N；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON)

12-150V P-Channel Trench MOSFET

60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switc

60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switc

-60 AMP/-50 Volts 33 mW P-Channel POWER MOSFET

文件：49.34 Kbytes Page：2 Pages

P-Channel POWER MOSFET

文件：88.1 Kbytes Page：3 Pages

-60 AMP/-50 Volts 33 mW P-Channel POWER MOSFET

文件：49.34 Kbytes Page：2 Pages