型号 功能描述 生产厂家 企业 LOGO 操作
NCE40T120VT

1200V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

NCEPOWER

新洁能

NCE40T120VT

1200-1350V IGBT

NCEPOWER

新洁能

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.42 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.45 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topology in automotive applications. Features

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

ONSEMI

安森美半导体

IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Efficient Trench

ONSEMI

安森美半导体

1200V, 40A, Irrm=12.3A IGBT MOSFET

DESCRIPTION The AM40T120 is available in TO-247 Package FEATURES ⚫ Fast Switching ⚫ Low VCE(sat): 2.1V ⚫ Positive Temperature Coefficient ⚫ Very Soft, Fast Recovery Anti-Parallel Diode ⚫ Irrm: 12.3A APPLICATION ⚫ UPS ⚫ Welding Converters ⚫ Converters With High Switching Frequency

AITSEMI

创瑞科技

更新时间:2025-12-31 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NCE/新洁能
21+
TO-3P
30000
百域芯优势 实单必成 可开13点增值税
NCE
24+
TO-247
15000
原装原标原盒 给价就出 全网最低
NCE/新洁能
25+
TO-3P
60000
全新原装现货特价销售,欢迎来电查询
NCE
24+
TO247
39500
进口原装现货 支持实单价优
NCE Power(新洁能)
25+
TO-247
500000
源自原厂成本,高价回收工厂呆滞
无锡新洁能
2447
TO-3P
105000
30个/管一级代理专营品牌!原装正品,优势现货,长期
NCE新洁能
21+
TO-3P
25000
进口原装!长期供应!绝对优势价格(诚信经营
NCE
25+
TO-247
20000
原装正品价格优惠,志同道合共谋发展
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
NCE/新洁能
23+
TO-3P
50000
全新原装正品现货,支持订货

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