NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -40V,ID = -6A RDS(ON)

12-150V P-Channel Trench MOSFET

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐60V RDSON (MAX.) 62mΩ ID ‐17A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

P-Channel 60 V (D-S) MOSFET

文件：1.94327 Mbytes Page：9 Pages

P-Channel 60 V (D-S) MOSFET

文件：979.88 Kbytes Page：8 Pages

P-Channel Enhancement Mode Power MOSFET

文件：363.17 Kbytes Page：6 Pages