N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protested. General Features ● VDS = 30

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3400XY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 5.1A RDS(ON)

N-Channel Enhancement Mode Power MOSFET

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N-Channel 30-V (D-S) MOSFET

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12-200V N-Channel Trench MOSFET

N-Channel Enhancement Mode Power MOSFET

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12-200V N-Channel Trench MOSFET

Heyco® PG and Metric Threaded Plugs

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Precision Potentiometer

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Precision Potentiometer

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The 3400 uses advanced trench technology to provide excellent RDS(ON)

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4.8A竊?0V N-CHANNEL MOSFET

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