NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0202M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 200V,ID =2A RDS(ON)

12-200V N-Channel Trench MOSFET

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

Low Profile SMD LTE Chip Antenna

Features • Frequency Range: 698-960 / 1710-2690 MHz • Compact & Low-Profile • Peak Gain: 1.0 / 5.9 dBi • Efficiency: 66 % / 80 % • Surface Mount (SMD)

Low Profile SMD LTE Chip Antenna

Features • Frequency Range: 698-960 / 1710-2690 MHz • Compact & Low-Profile • Peak Gain: 1.0 / 5.9 dBi • Efficiency: 66 % / 80 % • Surface Mount (SMD)

HandyHex™ Adjustable Handle

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