NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 3A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0103M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 3A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0103Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 3A RDS(ON)

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ILLUMINATED OR NON-ILLUMINATED PUSHBUTTON SWITCHES Panel cut-out 횠16 (.630)

文件：822.28 Kbytes Page：7 Pages