| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NCD57255 | Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 |   | |
NCD57255 | Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | |
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
24+ |
NA/ |
6000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
onsemi(安森美) |
24+ |
QFN28(4x4) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ON |
24+ |
SOIC-16 |
25000 |
ON全系列可订货 |
|||
onsemi |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
N/A |
25+23+ |
NA |
54087 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
SP |
23+ |
65480 |
|||||
MOSDDH |
23+ |
21500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
NIC |
2001 |
200 |
公司优势库存 热卖中!! |
||||
NICCOMPONENTS |
2406+ |
71260 |
诚信经营!进口原装!量大价优! |
||||
24+ |
3000 |
公司存货 |
NCD57255芯片相关品牌
NCD57255规格书下载地址
NCD57255参数引脚图相关
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- NCD6
- NCD57540DWKR2G
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NCD57255数据表相关新闻
NCD57540DWKR2G
NCD57540DWKR2G
2023-4-12NCD57253DWR2G
NCD57253DWR2G
2023-4-12NCD57252DWR2G
NCD57252DWR2G
2023-4-12NCD2100MTR
NCD2100MTR
2022-11-30NCE0103M
NCE0103M
2021-7-31NCE0103
NCE0103
2021-7-31
DdatasheetPDF页码索引
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