RFID ICs

·High read sensitivity with dedicated antenna \n·Non tune technology \n·Industry leading read in proximity or through metal \n·On chip rectifier and voltage limiter \n·Reduced manufacturing variability via embedded trimming bits \n·Fast tag presence confirmation using the ID_conf command \n·Option t;

包装：带 描述：RFID TAG RD ONLY 134.2KHZ ENCAP RF/IF，射频/中频和 RFID RFID 应答器、标签

Energy Harvesting Battery-Free Wireless Power

文件：143.9 Kbytes Page：6 Pages

RFID ICs

·High read sensitivity with dedicated antenna \n·Non tune technology \n·Industry leading read in proximity or through metal \n·On chip rectifier and voltage limiter \n·Reduced manufacturing variability via embedded trimming bits \n·Fast tag presence confirmation using the ID_conf command \n·Option t;

Energy Harvesting Battery-Free Wireless Power

文件：143.9 Kbytes Page：6 Pages

Photo Interrupters

Photo Interrupters Overview CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB • 100 Tested f

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices