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NB213Z晶体管资料

  • NB213Z别名:NB213Z三极管、NB213Z晶体管、NB213Z晶体三极管

  • NB213Z生产厂家:美国国民半导体公司

  • NB213Z制作材料:Si-NPN

  • NB213Z性质:低频或音频放大 (LF)_TR_输出极 (E)

  • NB213Z封装形式:直插封装

  • NB213Z极限工作电压:70V

  • NB213Z最大电流允许值:0.5A

  • NB213Z最大工作频率:<1MHZ或未知

  • NB213Z引脚数:3

  • NB213Z最大耗散功率:0.75W

  • NB213Z放大倍数

  • NB213Z图片代号:A-10

  • NB213Zvtest:70

  • NB213Zhtest:999900

  • NB213Zatest:0.5

  • NB213Zwtest:0.75

  • NB213Z代换 NB213Z用什么型号代替:BD519,BD527,3DA92L,

型号 功能描述 生产厂家 企业 LOGO 操作

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

MOTOROLA

摩托罗拉

丝印代码:D213;DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

MOTOROLA

摩托罗拉

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

1024- 횞 512-pixel ccd image sensor

文件:325.65 Kbytes Page:21 Pages

TI

德州仪器

更新时间:2026-5-19 13:32:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CSR
2010
BGA
666
全新原装 正品现货
CSR
2019+
BGA
36000
原盒原包装 可BOM配套
CSR
25+
BGA
90000
全新原装现货
MOT/ST
24+
CAN3
6000
原装现货假一罚十
CSR
24+
BGA
9600
原装现货,优势供应,支持实单!
CSR
24+
BGA
43200
郑重承诺只做原装进口现货
CSR
23+24
BGA
28950
专营原装正品SMD二三极管,电源IC
CSR
24+
BGA
5000
全新原装正品,现货销售
CSR
25+
BGA
2650
原装优势!绝对公司现货
CSR
25+
BGA
2860
原厂原装正品价格优惠公司现货欢迎查询

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