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NB213Y晶体管资料

  • NB213Y别名:NB213Y三极管、NB213Y晶体管、NB213Y晶体三极管

  • NB213Y生产厂家:美国国民半导体公司

  • NB213Y制作材料:Si-NPN

  • NB213Y性质:低频或音频放大 (LF)_TR_输出极 (E)

  • NB213Y封装形式:直插封装

  • NB213Y极限工作电压:70V

  • NB213Y最大电流允许值:0.5A

  • NB213Y最大工作频率:<1MHZ或未知

  • NB213Y引脚数:3

  • NB213Y最大耗散功率:0.75W

  • NB213Y放大倍数

  • NB213Y图片代号:A-10

  • NB213Yvtest:70

  • NB213Yhtest:999900

  • NB213Yatest:0.5

  • NB213Ywtest:0.75

  • NB213Y代换 NB213Y用什么型号代替:BD519,BD527,3DA92L,

型号 功能描述 生产厂家 企业 LOGO 操作

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

MOTOROLA

摩托罗拉

丝印代码:D213;DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

MOTOROLA

摩托罗拉

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

1024- 횞 512-pixel ccd image sensor

文件:325.65 Kbytes Page:21 Pages

TI

德州仪器

更新时间:2026-5-18 18:49:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
24+/25+
410
原装正品现货库存价优
CSR
2223+
BGA
26800
只做原装正品假一赔十为客户做到零风险
CRS
2016+
BGA
5133
只做原装,假一罚十,公司可开17%增值税发票!
CSR
24+
BGA
7850
只做原装正品现货或订货假一赔十!
CSR/QUALCOMM
24+
BGA
89758
专做蓝牙芯片原装现货
CSR
23+
7636
CSR
25+
BGA
2860
原厂原装正品价格优惠公司现货欢迎查询
CSR
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
CSR
25+
20
全新原装!优势库存热卖中!
FSC
18+
TO-92
85600
保证进口原装可开17%增值税发票

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