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NB213H晶体管资料

  • NB213H别名:NB213H三极管、NB213H晶体管、NB213H晶体三极管

  • NB213H生产厂家:美国国民半导体公司

  • NB213H制作材料:Si-NPN

  • NB213H性质:低频或音频放大 (LF)_TR_输出极 (E)

  • NB213H封装形式:直插封装

  • NB213H极限工作电压:70V

  • NB213H最大电流允许值:0.5A

  • NB213H最大工作频率:<1MHZ或未知

  • NB213H引脚数:3

  • NB213H最大耗散功率:0.6W

  • NB213H放大倍数

  • NB213H图片代号:A-10

  • NB213Hvtest:70

  • NB213Hhtest:999900

  • NB213Hatest:0.5

  • NB213Hwtest:0.6

  • NB213H代换 NB213H用什么型号代替:BC639,3DK4C,

型号 功能描述 生产厂家 企业 LOGO 操作

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

MOTOROLA

摩托罗拉

丝印代码:D213;DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

MOTOROLA

摩托罗拉

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

1024- 횞 512-pixel ccd image sensor

文件:325.65 Kbytes Page:21 Pages

TI

德州仪器

更新时间:2026-5-18 15:35:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CSR/PBF
23+
BGA
5000
原装正品,假一罚十
CSR
25+
BGA
2650
原装优势!绝对公司现货
CSR
2023+
BGA
2000
原厂全新正品旗舰店优势现货
CSR
2023+
BGA
5800
进口原装,现货热卖
CSR/QUALCOMM
24+
BGA
89758
专做蓝牙芯片原装现货
MICROCHIP
25+
DIP/SOP
3200
全新原装、诚信经营、公司现货销售
CSR
24+
04+
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
CSR
24+
BGA
9600
原装现货,优势供应,支持实单!
FSC
18+
TO-92
85600
保证进口原装可开17%增值税发票
CSR
22+
BGA
8000
原装正品支持实单

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