位置：首页 > IC中文资料第5432页 > N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel MOSFET 600V, 1A, 9.3Ω Description TheN6001NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=9.3ΩMAX.(VGS=10V,ID=0.5A) •Lowinputcapacitance Ciss=215pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±1.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
N-channel MOSFET 600V, 1A, 9.3Ω Description TheN6001NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=9.3ΩMAX.(VGS=10V,ID=0.5A) •Lowinputcapacitance Ciss=215pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±1.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 2A, 4.4Ω Description TheN6002NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 2A, 4.4Ω Description TheN6002NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 2A, 4.4Ω Description TheN6003NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 2A, 4.4Ω Description TheN6003NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 4A, 2.0Ω Description TheN6004NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=2.0ΩMAX.(VGS=10V,ID=2.0A) •Lowinputcapacitance Ciss=900pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±4.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 4A, 2.0Ω Description TheN6004NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=2.0ΩMAX.(VGS=10V,ID=2.0A) •Lowinputcapacitance Ciss=900pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±4.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 6A, 1.2Ω Description TheN6006NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=1.2ΩMAX.(VGS=10V,ID=3.0A) •Lowinputcapacitance Ciss=1385pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±6.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 6A, 1.2Ω Description TheN6006NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=1.2ΩMAX.(VGS=10V,ID=3.0A) •Lowinputcapacitance Ciss=1385pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±6.0 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 8A, 0.75Ω Description TheN6008NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=0.75ΩMAX.(VGS=10V,ID=4.0A) •Lowinputcapacitance Ciss=2145pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±8. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
N-channel MOSFET 600V, 8A, 0.75Ω Description TheN6008NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=0.75ΩMAX.(VGS=10V,ID=4.0A) •Lowinputcapacitance Ciss=2145pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±8. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：TO-200AF 包装：散装 描述：SCR 400MV 11795A W46 分立半导体产品 晶闸管 - SCR | IXYS IXYS Integrated Circuits Division |  | | |
封装/外壳：TO-200AF 包装：散装 描述：SCR 600MV 11795A W46 分立半导体产品 晶闸管 - SCR | IXYS IXYS Integrated Circuits Division | | | |
40 V ??60 A ??N-channel Power MOS FET Application: Automotive 文件：272.04 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
N60产品属性
- 类型
描述
- 型号
N60
- 制造商
TR FASTENINGS
- 功能描述
SCREW POZI PAN STEEL BLK #6X1/4
- 制造商
TR FASTENINGS
- 功能描述
SCREW, POZI PAN, STEEL, BLK, #6X1/4
- 制造商
TR FASTENERS
- 功能描述
SCREW, POZI PAN, STEEL, BLK, #6X1/4, Thread Size -
- Imperial
No.6, Thread Size -
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-251 |
9000 |
原装正品 |
|||
BIVAR |
2308+ |
433930 |
一级代理,原装正品,公司现货! |
||||
RENESAS/瑞萨 |
TO-251 |
265209 |
假一罚十原包原标签常备现货! |
||||
RENESAS/瑞萨 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS |
21+ |
121731 |
只做原装 |
||||
RENESAS/瑞萨 |
23+ |
TO-251 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
Renesas(瑞萨) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
RENESAS/瑞萨 |
22+21+ |
TO-251 |
14998 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
23+ |
N/A |
36200 |
正品授权货源可靠 |
||||
Renesas(瑞萨) |
21+ |
A/N |
20000 |
专注品牌,只做原装,询价必回!!! |
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N60规格书下载地址
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2020-8-17N74F280AN，N74F30244N，N74F32D-T，
N74F280AN，N74F30244N，N74F32D-T，
2020-4-19N74LS27ML1，SN74LS273N，SN74LS273DW，SN74LS273H，SN74LS266N，SN74LS266D，SN74LS259MEL，SN74LS259ML1，SN74LS2600D，SN74LS259D，SN74LS257BMR1，SN74LS258BML1，SN74LS258BD，SN74LS256D，SN74LS256N
N74LS27ML1，SN74LS273N，SN74LS273DW，SN74LS273H，SN74LS266N，SN74LS266D，SN74LS259MEL，SN74LS259ML1，SN74LS2600D，SN74LS259D，SN74LS257BMR1，SN74LS258BML1，SN74LS258BD，SN74LS256D，SN74LS256N
2019-12-13
DdatasheetPDF页码索引
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