MOS FIELD EFFECT TRANSISTOR

Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on)1= 25 mΩMAX. (VGS=10 V, ID= 15 A) ⎯ RDS(on)2= 36 mΩMAX. (VGS= 4.5 V, ID= 15 A) • Low input capacitance ⎯ Ciss

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL MOSFET FOR SWITCHING

Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • Hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL MOSFET FOR SWITCHING

Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • Hig

N-CHANNEL MOSFET FOR SWITCHING

Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • Hig

N-CHANNEL MOSFET FOR SWITCHING

Description The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • Hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Multilayer SMD Ceramic Capacitors General Purpose Series

Description: MLCC consists of a conducting material and electrodes. To manufacture a chip-type SMT and achieve miniaturization, high density and high efficiency, ceramic condensers are used. MLCC is made by NP0, X7R and Y5V dielectric material and which provides product with high electrical prec

N-CHANNEL MOSFET FOR SWITCHING

Description The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID

N-CHANNEL MOSFET FOR SWITCHING

Description The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL MOSFET FOR SWITCHING

Description The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID

N-channel MOSFET Low on-state resistance

Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) • High curr

N-channel MOSFET Low on-state resistance

Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) • High curr

N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features • Low on-state resistance : RDS(on) = 8.5 mΩ max. ( VGS = 10 V, ID = 40 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±80 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features • Low on-state resistance : RDS(on) = 8.5 mΩ max. ( VGS = 10 V, ID = 40 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±80 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

N-channel MOSFET

Features • Low on-state resistance : RDS(on) = 12.9 mΩ max. ( VGS = 10 V, ID = 30 A ) • Low Ciss : Ciss = 2170 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±60 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

N-channel MOSFET

Features • Low on-state resistance : RDS(on) = 12.9 mΩ max. ( VGS = 10 V, ID = 30 A ) • Low Ciss : Ciss = 2170 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±60 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

N-channel MOSFET 60 V, 65 A, 8.4 mΩ

Features • Low on-state resistance RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±65A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 65A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel MOSFET 60 V, 65 A, 8.4 mΩ

Features • Low on-state resistance RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±65A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

N-channel MOSFET 60 V, 52 A, 14.3 mΩ

Features • Low on-state resistance RDS(on) = 14.3 mΩ max. ( VGS = 10 V, ID = 26 A • Low Ciss : Ciss = 1950 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±52A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

N-channel MOSFET 60 V, 52 A, 14.3 mΩ

Features • Low on-state resistance RDS(on) = 14.3 mΩ max. ( VGS = 10 V, ID = 26 A • Low Ciss : Ciss = 1950 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±52A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

N-channel MOSFET 60 V, 120 A, 3.0 mΩ

Features • Low on-state resistance : RDS(on) = 3.0 mΩ max. ( VGS = 10 V, ID = 60 A ) • Low Ciss : Ciss = 11300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±120 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

N-channel MOSFET 60 V, 120 A, 3.0 mΩ

Features • Low on-state resistance : RDS(on) = 3.0 mΩ max. ( VGS = 10 V, ID = 60 A ) • Low Ciss : Ciss = 11300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±120 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

48-Port 1U Rack-Mount Unshielded Blank Keystone/Multimedia Patch Panel, RJ45 Ethernet, USB, HDMI, Cat5e/6

Features Manages and Organizes up to 48 Network Connections This 1U unshielded patch panel features 48 blank cutouts that accommodate any type of keystone jack, including RJ45 Ethernet, HDMI audio/video, voice and USB. Each port is clearly numbered to help you identify connections. Quick an

DIN-Rail Mounting Enclosure Module for Snap-In Keystone Jacks and Couplers, Left Cover, TAA

Features Organizes Ethernet Network Patch Cables in Your Industrial DIN-Rail Installation This DIN-rail mounting module lets you manage network cable interconnectivity with one blank cutout, which accommodates all Tripp Lite snap-in keystone jacks and in-line couplers. Made from durable plastic

Right Cover for DIN-Rail Mounting Enclosure Module, TAA

Features Gives Full Coverage to a DIN-Rail Network Cable Connection in Harsh Industrial Environments The N063-001-ENC-R is a durable plastic right cover compatible with the Tripp Lite N063-001-ENC-K1 DIN-Rail Mounting Enclosure Module, which comes with a left cover. This cover allows full cover

2-Port Metal DIN-Rail Mounting Module for Snap- In Keystone Jacks and Couplers, Silver, TAA

Features Organizes a Wide Variety of Ethernet Network Patch Cables in Your DIN-Rail Installation This DIN-rail mounting module lets you manage network cable interconnectivity with two blank cutouts, which accommodate all Tripp Lite snap-in keystone jacks and in-line couplers. Made from sheet me

3-Port Metal DIN-Rail Mounting Module for Snap- In Keystone Jacks and Couplers, Silver, TAA

Features Organizes a Wide Variety of Ethernet Network Patch Cables in Your DIN-Rail Installation This DIN-rail mounting module lets you manage network cable interconnectivity with three blank cutouts, which accommodate all Tripp Lite snap-in keystone jacks and in-line couplers. Made from sheet

8-Port Metal DIN-Rail Mounting Keystone Patch Panel with Grounding, Black/Silver, TAA

Features Organizes a Wide Variety of Ethernet Network Patch Cables in Your DIN-Rail Installation This DIN-rail mounting patch panel lets you manage network cable interconnectivity with eight blank cutouts, which accommodate all Tripp Lite snap-in keystone jacks and in-line couplers. Each RJ45

包装：盒 描述：CELLULAR RUBBER GASKET 连接器，互连器件 重型连接器配件

包装：盒 描述：CELLULAR RUBBER GASKET 连接器，互连器件 重型连接器配件

1U Hinged Wall-Mount Patch Panel Bracket

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2U Hinged Wall-Mount Patch Panel Bracket

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4U Hinged Wall-Mount Patch Panel Bracket

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N-CHANNEL MOSFET FOR SWITCHING

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Multilayer Ceramic Capacitors

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12-Port 1U Rack-Mount Unshielded Blank Keystone/Multimedia Patch Panel, RJ45 Ethernet, USB, HDMI, Cat5e/6

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16-Port 1U Rack-Mount Unshielded Blank Keystone/Multimedia Patch Panel, RJ45 Ethernet, USB, HDMI, Cat5e/6

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24-Port 2U Rack-Mount Unshielded Blank Keystone/Multimedia Patch Panel, RJ45 Ethernet, USB, HDMI, Cat5e/6

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24-Port 1U Rack-Mount Shielded Blank Keystone/Multimedia Patch Panel, RJ45 Ethernet, USB, HDMI, Cat5e/6, TAA

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32-Port 2U Rack-Mount Unshielded Blank Keystone/Multimedia Patch Panel, RJ45 Ethernet, USB, HDMI, Cat5e/6

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SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages

SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages

SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages

SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages

SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages

SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages

SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages

SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages

SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages

SMD INDUCTORS

文件：249.84 Kbytes Page：6 Pages