PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0501S. ● VCEO = -50 V ● IC(DC) = -1.0 A ● Miniature package SOT-23F (2SB1115: Package variation of 3pPoMM)

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complements to N0501S. ● VCEO = -50 V ● IC(DC) = -1.0 A ● Miniature package SOT-23F (2SB1115: Package variation of 3pPoMM)

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES • Complements to N0501R. • VCEO = 50 V • IC(DC) = 1.0 A • Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM)

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES • Complements to N0501R. • VCEO = 50 V • IC(DC) = 1.0 A • Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM)

Transistor

PNP SILICON EPITAXIAL TRANSISTOR

文件：84.47 Kbytes Page：5 Pages

Transistor

NPN SILICON EPITAXIAL TRANSISTOR

文件：85.25 Kbytes Page：5 Pages

Mechanical Cam Switches

BNS 819-D08-R12-62-10-FD-S90L Basic features Approval/Conformity CE UKCA CCC WEEE Basic standard IEC 60947-5-1 Operating principle 1-8. Switch position: Mechanical Version Snap contact

COVERS - DOUBLE ROW

SPECIFICATIONS: • Materials, All 0.03” thick: • CW - White vinyl • CB - Black laminate phenolic • CC - Clear acrylic • Two theremoplastic spring clips for mounting provided • Printing available for circuit identification • See standard styles below; characters are 1/8” tall. • Cust

Outgassing Compliant Current Sensors

文件：238.56 Kbytes Page：2 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.56141 Mbytes Page：13 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.6412 Mbytes Page：12 Pages