RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

• Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,

IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz

IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01 Probability on CCDF.

Output Power — 18 Watts Avg.

Power Gain — 13.0 dB

Efficiency — 23

ACPR — -51 dB

IM3 — -36.5 dBc

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.