DESCRIPTION

The MGFK35V2732 is an internally impedance matched GaAs power FET especially designed for use in 12.7 ~ 13.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

● Internally impedance matched

● High output power

P1dB = 3.5 W (TYP.) @ f = 12.7 ~ 13.2 GHz

● High linear power gain

GLP = 7.0 dB (TYP.) @ f = 12.7 ~ 13.2 GHz

● High power added efficiency

ηadd = 26 (TYP.) @ f = 12.7 ~ 13.2 GHz, P1dB

APPLICATION

For use in 12.7 ~ 13.2 GHz band amplifiers