DESCRIPTION

The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

Internally matched to 50 ohm system

High output power

P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz

High power gain

GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz

High power added efficiency

P.A.E. = 33 (TYP.) @ f=5.9 - 6.4 GHz

Low Distortion[Item-51]

IM3=-45 dBc(TYP.)@Po=34.5dBm S.C.L.

APPLICATION

5.9 - 6.4 GHz band power amplifier