DESCRIPTION

The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

FEATURES

• High output power at 1dB gain compression

P1dB=23dBm(TYP.) @f=8GHz

• High linear power gain

GLP=9dB(TYP.) @f=8GHz

• High reliability and stability

APPLICATION

S to X band medium-power amplifiers and oscillators.