LOW REVERSE LEAKAGE SCHOTTKY DIODE

100 Volts 25 Amps

Features

• Tungsten schottky barrier

• Oxide passivated structure

• Guard ring protection for increased reverse energy capability

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap is anode: 1N6817) and reverse polarity (strap is cathode: 1N6817R)

• TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS) screening i.a.w. Microsemi internal procedure PS11.50 available