DESCRIPTION

LX5540 is a co-package RFIC consisting of an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) power amplifier and a InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) low noise amplifier. Both are optimized for

WLAN applications in the 2.3-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching. The LNA is fully matched internally and no external matching circuit is required.

KEY FEATURES

Advanced InGaP HBT

2.3-2.5GHz Operation

Single-Polarity 3.3V Supply

Quiescent Current 80mA

Power Gain 28 dB

Total Current 145mA for Pout=20 dBm OFDM

EVM~3 at 20dBm 54Mbps /64QAM

LNA Gain ~ 14 dB

LNA Noise Figure ~ 1.5dB

LNA Input IP3 ~ +4dBm

On-Chip Bias Circuit

On-Chip Input/Output Match

Small Footprint: 3x3mm2

Low Profile: 0.45mm

APPLICATIONS

IEEE 802.11b/g