DESCRIPTION

The LX5516 is a power amplifier module optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50 Ω impedance matched at both input and output.

The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V, it delivers 29dB power gain between 2.4-2.5GHz, at a low quiescent current of 80mA.

KEY FEATURES

◾ Advanced InGaP HBT

◾ 2.4-2.5GHz Operation

◾ Single-Polarity 3.3V Supply

◾ Quiescent Current ~80mA

◾ Power Gain ~ 29 dB

◾ Pout=~+18dBm for 2.5 EVM, OFDM 64QAM/54Mbps

◾ Total Current ~130mA for Pout= +18dBm

◾ 50Ω Input/Output Matching

◾ On-chip Output Power Detector

◾ Small Footprint: 2x2mm2

◾ Ultra Low Profile:0.46mm

APPLICATIONS

◾ IEEE 802.11b/g/n