位置:GEA2/IO233PPB5V4 > GEA2/IO233PPB5V4详情

GEA2/IO233PPB5V4中文资料

厂家型号

GEA2/IO233PPB5V4

文件大小

10501.73Kbytes

页面数量

212

功能描述

Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology

数据手册

下载地址一下载地址二到原厂下载

简称

MICROSEMI美高森美

生产厂商

Microsemi Corporation

中文名称

美高森美公司官网

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GEA2/IO233PPB5V4数据手册规格书PDF详情

Features and Benefits

High Capacity

• 15 k to 1 M System Gates

• Up to 144 kbits of True Dual-Port SRAM

• Up to 300 User I/Os

Reprogrammable Flash Technology

• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process

• Instant On Level 0 Support

• Single-Chip Solution

• Retains Programmed Design when Powered Off

High Performance

• 350 MHz System Performance

• 3.3 V, 66 MHz 64-Bit PCI†

In-System Programming (ISP) and Security

• ISP Using On-Chip 128-Bit Advanced Encryption Standard (AES) Decryption (except ARM®-enabled ProASIC®3 devices) via JTAG (IEEE 1532–compliant)†

• FlashLock® to Secure FPGA Contents

Low Power

• Core Voltage for Low Power

• Support for 1.5 V-Only Systems

• Low-Impedance Flash Switches

High-Performance Routing Hierarchy

• Segmented, Hierarchical Routing and Clock Structure

Advanced I/O

• 700 Mbps DDR, LVDS-Capable I/Os (A3P250 and above)

• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation

• Wide Range Power Supply Voltage Support per JESD8-B, Allowing I/Os to Operate from 2.7 V to 3.6 V

• Bank-Selectable I/O Voltages—up to 4 Banks per Chip

• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V / 2.5 V / 1.8 V / 1.5 V, 3.3 V PCI / 3.3 V PCI-X† and LVCMOS 2.5 V / 5.0 V Input

• Differential I/O Standards: LVPECL, LVDS, B-LVDS, and M-LVDS (A3P250 and above)

• I/O Registers on Input, Output, and Enable Paths

• Hot-Swappable and Cold Sparing I/Os‡

• Programmable Output Slew Rate† and Drive Strength

• Weak Pull-Up/-Down

• IEEE 1149.1 (JTAG) Boundary Scan Test

• Pin-Compatible Packages across the ProASIC3 Family

Clock Conditioning Circuit (CCC) and PLL†

• Six CCC Blocks, One with an Integrated PLL

• Configurable Phase-Shift, Multiply/Divide, Delay Capabilities and External Feedback

• Wide Input Frequency Range (1.5 MHz to 350 MHz)

Embedded Memory†

• 1 kbit of FlashROM User Nonvolatile Memory

• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4, ×9, and ×18 organizations)†

• True Dual-Port SRAM (except ×18)

ARM Processor Support in ProASIC3 FPGAs

• M1 ProASIC3 Devices—ARM®Cortex™-M1 Soft Processor Available with or without Debug

更新时间:2025-6-1 22:54:00
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Microsemi Corporation 美高森美公司

中文资料: 97261条

Microsemi Corporation是一家全球领先的半导体和系统解决方案供应商,专注于高性能、低功耗的产品。公司成立于1983年,总部位于美国加利福尼亚州的阿尔塔迪纳(Aliso Viejo, CA)。Microsemi的产品广泛应用于航空航天及国防、通信、数据中心、工业及医疗等多个领域。 Microsemi提供的产品包括:模拟和混合信号集成电路、FPGA(现场可编程门阵列)、电源管理解决方案、时钟和时序解决方案、嵌入式系统以及与通信相关的设备。公司以其创新的技术和高可靠性著称,致力于支持客户在其复杂和多变的应用中实现高效能和高安全性。 通过不断的研发投资和战略收购,Microsemi不