GENERAL DESCRIPTION

The MT5C6401 is organized as a 65,556 x 1 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process. Micron SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

FEATURES

• High speed: 9, 10, 12, 15, 20 and 25ns

• High-performance, low-power, CMOS double-metal process

• Single +5V ±10 power supply

• Easy memory expansion with /C/E option

• All inputs and outputs are TTL-compatible