GENERAL DESCRIPTION

The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell. These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

FEATURES

• Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns

• Battery Backup: 2V data retention

• Low power standby

• High-performance, low-power CMOS double-metal process

• Single +5V (+10%) Power Supply

• Easy memory expansion with CE

• All inputs and outputs are TTL compatible