GENERAL DESCRIPTION

The MT28F322P3 is a high-performance, highdensity, nonvolatile memory solution that can significantly improve system performance. This new architecture features a two-memory-bank configuration that supports background operation with no latency.

A high-performance bus interface allows a fast page mode data transfer; a conventional asynchronous bus interface is provided as well.

FEATURES

• Flexible dual-bank architecture

Support for true concurrent operation with zero latency

Read bank a during program bank b and vice versa

Read bank a during erase bank b and vice versa

• Basic configuration:

Seventy-one erasable blocks

Bank a (8Mb for data storage)

Bank b (24Mb for program storage)

• VCC, VCCQ, VPP voltages

2.7V (MIN), 3.3V (MAX) VCC

2.2V (MIN), 3.3V (MAX) VCCQ

3.0V (TYP) VPP (in-system PROGRAM/ERASE)

12V ±5 (HV) VPP tolerant (factory programming compatibility)

• Random access time: 70ns @ 2.7V VCC

• Page Mode read access

Eight-word page

Interpage read access: 70ns @ 2.7V

Intrapage read access: 30ns @ 2.7V

• Low power consumption (VCC = 3.3V)

Asynchronous/interpage READ < 15mA

Intrapage READ < 7mA

WRITE < 20mA (MAX)

ERASE < 25mA (MAX)

Standby < 15µA (TYP), 50µA (MAX) @ 3.3V

Automatic power save (APS) feature

• Enhanced write and erase suspend options

ERASE-SUSPEND-to-READ within same bank

PROGRAM-SUSPEND-to-READ within same bank

ERASE-SUSPEND-to-PROGRAM within same bank

• Dual 64-bit chip protection registers for security purposes

• Cross-compatible command support

Extended command set

Common flash interface

• PROGRAM/ERASE cycle

100,000 WRITE/ERASE cycles per block

• Fast programming algorithm VPP = 12V ±5