位置：首页 > IC中文资料第7293页 > MX812
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MX812 | VSR CODEC WITH DRAM CONTROL 文件：176.47 Kbytes Page：14 Pages | CMLMICRO |   | |
MX812 | VSR CODEC WITH DRAM CONTROL 文件：115.14 Kbytes Page：13 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
MX812 | VSR CODEC WITH DRAM CONTROL | CMLMICRO | | |
VSR CODEC WITH DRAM CONTROL 文件：115.14 Kbytes Page：13 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
VSR CODEC WITH DRAM CONTROL 文件：115.14 Kbytes Page：13 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Integrated Circuit Audio Power Amplifier, 1W Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr | NTE | | ||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo | STMICROELECTRONICS 意法半导体 | | ||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo | STMICROELECTRONICS 意法半导体 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M | NEC 瑞萨 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M | NEC 瑞萨 | |
MX812产品属性
- 类型
描述
- 型号
MX812
- 制造商
CMLMICRO
- 制造商全称
CML Microcircuits
- 功能描述
VSR CODEC WITH DRAM CONTROL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
5000 |
公司存货 |
MX812规格书下载地址
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2019-4-26
DdatasheetPDF页码索引
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