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MWS价格
参考价格：￥0.3782
型号：MWS-1-01 品牌：RICHCO 备注：这里有MWS多少钱，2024年最近7天走势，今日出价，今日竞价，MWS批发/采购报价，MWS行情走势销售排行榜，MWS报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MWS | Adustable Elastic Fabric(Standard Performance) 文件：324.21 Kbytes Page：1 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |  |   |
MWS | High Voltage 文件：171.47 Kbytes Page：2 Pages | ILLINOISCAPACITORIllinois Capacitor, Inc. 伊利诺斯伊利诺斯电容器股份有限公司 |  | |
20W Standard Package DESCRIPTION MWSDC/DCconvertersprovideupto20wattsofoutputpowerinanindustry-standardpackageandfootprint.TheMWSisavailableineither24Vor48Vinputversions.Withamaximumcasetemperatureof100°C,theMWSiswellsuitedforthemostdemandingtelecom,networking,andindustr | POWER-ONE Power-One |  | | |
20W Standard Package DESCRIPTION MWSDC/DCconvertersprovideupto20wattsofoutputpowerinanindustry-standardpackageandfootprint.TheMWSisavailableineither24Vor48Vinputversions.Withamaximumcasetemperatureof100°C,theMWSiswellsuitedforthemostdemandingtelecom,networking,andindustr | POWER-ONE Power-One | | | |
20W Standard Package DESCRIPTION MWSDC/DCconvertersprovideupto20wattsofoutputpowerinanindustry-standardpackageandfootprint.TheMWSisavailableineither24Vor48Vinputversions.Withamaximumcasetemperatureof100°C,theMWSiswellsuitedforthemostdemandingtelecom,networking,andindustr | POWER-ONE Power-One | | | |
InGaP HBT Gain Block DESCRIPTION Thisgeneralpurposeamplifierisalowcost,broadbandRFICmanufacturedwithanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)process(MOCVD).ThisRFICamplifierwasdesignedasaneasilycascadable50ohmgainblock.Thedeviceisself-containedwith50ohminputandoutputi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
CMDA Power Amplifier DESCRIPTION TheMWSCDMAisahigh-efficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VCDMAandTDMAPCSbattery-power | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
InGaP HBT Gain Block DESCRIPTION Thisgeneralpurposeamplifierisalowcost,broadbandRFICmanufacturedwithanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)process(MOCVD).ThisRFICamplifierwasdesignedasaneasilycascadable50ohmgainblock.Thedeviceisself-containedwith50ohminputandoutputi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
InGaP HBT Gain Block DESCRIPTION Thisgeneralpurposeamplifierisalowcost,broadbandRFICmanufacturedwithanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)process(MOCVD).ThisRFICamplifierwasdesignedasaneasilycascadable50ohmgainblock.Thedeviceisself-containedwith50ohminputandoutputi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
CMDA Power Amplifier DESCRIPTION TheMWSCDMAisahigh-efficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VCDMAandTDMAPCSbattery-power | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
W-CMDA Power Amplifier DESCRIPTION TheMWSW-CDMAisahighefficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VW-CDMAandCDMA2000,spreadsp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
W-CMDA Power Amplifier DESCRIPTION TheMWSW-CDMAisahighefficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VW-CDMAandCDMA2000,spreadsp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
W-CMDA Power Amplifier DESCRIPTION TheMWSW-CDMAisahighefficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VW-CDMAandCDMA2000,spreadsp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 |  | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
封装/外壳：径向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TCO 250VAC 15A 130C (266F)RADIAL 电路保护 热熔断体（热熔保险丝和断路器） | Cantherm Cantherm - Cantherm |  | | |
封装/外壳：径向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TCO 250VAC 15A 143C (289F)RADIAL 电路保护 热熔断体（热熔保险丝和断路器） | Cantherm Cantherm - Cantherm | | | |
Adustable Elastic Fabric(Standard Performance) 文件：324.21 Kbytes Page：1 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
High-speed 8-bit A/D Converters | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM) | NTENTE Electronics, Inc |  | |
MWS产品属性
- 类型
描述
- 型号
MWS
- 功能描述
防静电控制产品 WRIST STRAP ELASTIC BROWN ADJUSTABLE
- RoHS
否
- 制造商
3M Electronic Specialty
- 产品
Air Ionizers
- 类型
Mini
- 大小
4.5 in x 3.3 in x 2 in
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Sunlord(顺络) |
23+ |
SMD,8.2x8.8x3.8mm |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
CHN |
23+ |
NA/ |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Sunlord |
23+ |
SMD |
10197 |
全新原装假一赔十 |
|||
RICHCO |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IPD |
18+ |
MODULE |
2173 |
公司大量全新正品 随时可以发货 |
|||
Sunlord |
2年内 |
NA |
15000 |
英博尔原装优质现货订货渠道商 |
|||
顺络 |
23+ |
0603 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
SUNLORD/顺络 |
SMD |
699839 |
假一赔百原装新货 |
||||
SIERRA |
2320+ |
QFP-100 |
562000 |
16年只做原装原标渠道现货终端BOM表可配单提供样品 |
|||
RICHCO |
23+ |
NA |
12038 |
专做原装正品,假一罚百! |
MWS芯片相关品牌
MWS规格书下载地址
MWS参数引脚图相关
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- MT4264-20
- MT4264-15
- MSM4520
- MSM4518
- MSM4514RS
- MSM4086
- MSM4085
- MSM4082
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MWS数据表相关新闻
MVR1261C-112ML
MVR1261C-112ML
2023-12-15MWCT1014SFVLLR
MWCT1014SFVLLR
2023-11-8MWCT1001AVLH
全新原装现货支持第三方机构验证
2023-2-2MX08
MX08,当天发货0755-82732291全新原装现货或门市自取.
2020-8-13MWT-22Q4原装现货
深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729
2019-12-4MwT-1789原装现货
深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729
2019-12-4
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