Adustable Elastic Fabric(Standard Performance)

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High Voltage

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20W Standard Package

DESCRIPTION MWS DC/DC converters provide up to 20 watts of output power in an industry-standard package and footprint. The MWS is available in either 24V or 48V input versions. With a maximum case temperature of 100°C, the MWS is well suited for the most demanding telecom, networking, and industr

20W Standard Package

DESCRIPTION MWS DC/DC converters provide up to 20 watts of output power in an industry-standard package and footprint. The MWS is available in either 24V or 48V input versions. With a maximum case temperature of 100°C, the MWS is well suited for the most demanding telecom, networking, and industr

20W Standard Package

DESCRIPTION MWS DC/DC converters provide up to 20 watts of output power in an industry-standard package and footprint. The MWS is available in either 24V or 48V input versions. With a maximum case temperature of 100°C, the MWS is well suited for the most demanding telecom, networking, and industr

InGaP HBT Gain Block

DESCRIPTION This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output i

CMDA Power Amplifier

DESCRIPTION The MWS CDMA is a high-efficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-power

InGaP HBT Gain Block

DESCRIPTION This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output i

InGaP HBT Gain Block

DESCRIPTION This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output i

CMDA Power Amplifier

DESCRIPTION The MWS CDMA is a high-efficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V CDMA and TDMA PCS battery-power

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

W-CMDA Power Amplifier

DESCRIPTION The MWS W-CDMA is a highefficiency linear amplifier targeting 3V mobile handheld systems. The device is manufactured in an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) RF IC fab process. It is designed for use as a final RF amplifier in 3V W-CDMA and CDMA2000, spread sp

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

256-Word x 4-Bit LSI Static RAM

Description The MWS5101 and MWS5101A are 256 word by 4-bit static random access memories designed for use in memory systems where high speed, very low operating current, and simplicity in use are desirable. They have separate data inputs and outputs and utilize a single power supply of 4V to 6.5V

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

1024-Word x 4-Bit LSI Static RAM

Description The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

MICRO WIRE SADDLE

SLIGHT PROTRUSIONS MAY APPEAR ON PARTS

封装/外壳：径向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TCO 250VAC 15A 130C (266F)RADIAL 电路保护 热熔断体（热熔保险丝和断路器）

封装/外壳：径向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TCO 250VAC 15A 143C (289F)RADIAL 电路保护 热熔断体（热熔保险丝和断路器）

Adustable Elastic Fabric(Standard Performance)

文件：324.21 Kbytes Page：1 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

1024-Word x 4-Bit LSI Static RAM

文件：113.94 Kbytes Page：8 Pages

High-speed 8-bit A/D Converters

Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)