单 N 沟道，功率 MOSFET，20V，2.8A，85mΩ

汽车用功率 MOSFET。此类小型表面贴装 MOSFET 的 RDS(on) 可确保最小的功率损耗和节能，使得此类器件适用于空间敏感型功率管理电路。通过 AEC-Q101 认证的 MOSFET，且符合生产件批准程序 (PPAP)，适用于汽车应用。 • Low RDS(on) Provides Higher Efficiency and Extends Battery Life\n• Miniature SOT-23 Surface Mount Package Saves board Space\n• IDSS Specified at Elevated Temperature\n• Qualified to AEC Q101\n• PPAP Capable\n• RoHS Compliant;

Power MOSFET

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Power MOSFET

文件：97.81 Kbytes Page：5 Pages

2.8 Amps, 20 Volts, N-Channel SOT-23

These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT–23 Surface Mount Pac

2.8 Amps, 20 Volts, N-Channel SOT-23

These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT–23 Surface Mount Pac

DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of wi

MEDIUM POWER LOGIC LEVEL TMOS FET 1.6 AMP 20 VOLTS

Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold volta