Medium Power Field Effect Transistor

N–Channel Enhancement Mode

Silicon Gate TMOS E–FET™

SOT–223 for Surface Mount

This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc–dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT–223 package which is designed for medium power surface mount applications.

• Silicon Gate for Fast Switching Speeds

• Low Drive Requirement to Interface Power Loads to Logic

Level ICs, VGS(th) = 2 Volts Max

• Low RDS(on) — 0.15 Ω max

• The SOT–223 Package can be Soldered Using Wave or Reflow.

The Formed Leads Absorb Thermal Stress During Soldering,

Eliminating the Possibility of Damage to the Die

• Available in 12 mm Tape and Reel

Use MMFT2N02ELT1 to order the 7 inch/1000 unit reel.

Use MMFT2N02ELT3 to order the 13 inch/4000 unit reel.