Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. These devices are designed for use in low voltage

Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. These devices are designed for use in low voltage

DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of w

Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a low reverse recovery time. These devices are designed for use in low voltage

Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual

文件：76.17 Kbytes Page：5 Pages