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MVDF1N05E中文资料

厂家型号

MVDF1N05E

文件大小

211.3Kbytes

页面数量

7

功能描述

Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

MOSFET N-CH 50V 2A 8-SOIC

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

MVDF1N05E数据手册规格书PDF详情

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. These devices

are designed for use in low voltage, high speed switching applications

where power efficiency is important. Typical applications are dc−dc

converters, and power management in portable and battery powered

products such as computers, printers, cellular and cordless phones.

They can also be used for low voltage motor controls in mass storage

products such as disk drives and tape drives. The avalanche energy is

specified to eliminate the guesswork in designs where inductive loads

are switched and offer additional safety margin against unexpected

voltage transients.

Features

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

• IDSS Specified at Elevated Temperature

• This is a Pb−Free Device

• MVDF Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MVDF1N05E产品属性

  • 类型

    描述

  • 型号

    MVDF1N05E

  • 功能描述

    MOSFET N-CH 50V 2A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    -

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2025-10-8 11:19:00
供应商 型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
8-SOIC(0.154 3.90mm 宽)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
NK/南科功率
2025+
SOP-8
986966
国产
ON Semiconductor
22+
8SOIC
9000
原厂渠道,现货配单
ON/安森美
23+
SOP-8
16900
原厂授权一级代理,专业海外优势订货,价格优势、品种
SOSHINELECTRIC
21+
SMD
6000
全新原装 现货 价优
SOSHINELECTRIC
22+
SMD
12245
现货,原厂原装假一罚十!
SOSHINELECTRIC
23+
SMD
6000
专业配单保证原装正品假一罚十
SOSHIN/双信电机
24+
SMD
60000
全新原装现货
MacroImage
25+
BGA
2317
品牌专业分销商,可以零售
MacroImage
24+
BGA
6980
原装现货,可开13%税票