GaAs Varactor Diodes Hyperabrupt

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封装/外壳：模具 包装：托盘 描述：GAAS TVAR NON HERMETIC EPSM SMT 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

包装：托盘 描述：GAAS TVAR NON HERMETIC MICROSTRI 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

Low Current, High Performance NPN Silicon Bipolar Transistor

Description Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die

Low Current, High Performance NPN Silicon Bipolar Transistor

Description Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places th

Low Current, High Performance NPN Silicon Bipolar Transistor

Description Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places th

Low Current, High Performance NPN Silicon Bipolar Transistor

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