Silicon Super Fast Recovery Diode

文件：422.68 Kbytes Page：4 Pages

Silicon Super Fast Recovery Diode

文件：750.62 Kbytes Page：4 Pages

封装/外壳：三塔 包装：散装 描述：DIODE MODULE 600V 300A 3TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Super Fast Recovery Rectifiers

Silicon Super Fast Recovery Diode

文件：750.62 Kbytes Page：4 Pages

Silicon Super Fast Recovery Diode

文件：969.49 Kbytes Page：2 Pages

Silicon Super Fast Recovery Diode

文件：750.62 Kbytes Page：4 Pages

Silicon Super Fast Recovery Diode

文件：422.68 Kbytes Page：4 Pages

封装/外壳：三塔 包装：散装 描述：DIODE MODULE 600V 300A 3TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Isolation Voltage 2500 Vrms 1ch Gate Driver Providing Galvanic Isolation

General Description The BM60060FV-C is a gate driver with an isolation voltage of 2500 Vrms. It has an I/O delay time of 210 ns, minimum input pulse width of 90 ns, and incorporates the fault signal output function, under voltage lockout (UVLO) function, short circuit protection (SCP, built-

60 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

70 MHz Bandpass SAW Filter

文件：54.22 Kbytes Page：1 Pages

60 W, 6.0 GHz, GaN HEMT Die

文件：618.74 Kbytes Page：7 Pages

SCHOTTKY POWERMOD

文件：156.67 Kbytes Page：2 Pages