Surface Mount Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accorda

Surface Mount Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accorda

Surface Mount Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accorda

Surface Mount Ultrafast Plastic Rectifier

FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accorda

封装/外壳：DO-214AB，SMC 包装：管件 描述：DIODE GEN PURP 200V 3A DO214AB 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-214AB，SMC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 200V 3A DO214AB 分立半导体产品 二极管 - 整流器 - 单

Power MOSFET

VDS (V) 400 RDS(on) (Ω) VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

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