Silicon Super Fast Recovery Diode

文件：342.71 Kbytes Page：3 Pages

Silicon Super Fast Recovery Diode

文件：652.46 Kbytes Page：3 Pages

封装/外壳：D-67 包装：散装 描述：DIODE GEN PURP 200V 100A D-67 分立半导体产品 二极管 - 整流器 - 单

Super Fast Recovery Rectifiers

Super Fast Recovery Rectifiers

封装/外壳：D-67 包装：散装 描述：DIODE GEN PURP 200V 100A D-67 分立半导体产品 二极管 - 整流器 - 单

Silicon Super Fast Recovery Diode

文件：652.46 Kbytes Page：3 Pages

Silicon Super Fast Recovery Diode

文件：342.71 Kbytes Page：3 Pages

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

POWER TRANSISTORS(60A,200-250V,250W)

60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 960 MHz, 28 Vol