Silicon Super Fast Recovery Diode

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Silicon Super Fast Recovery Diode

文件：652.46 Kbytes Page：3 Pages

封装/外壳：D-67 包装：卷带（TR） 描述：DIODE GEN PURP 50V 100A D-67 分立半导体产品 二极管 - 整流器 - 单

Super Fast Recovery Rectifiers

Silicon Super Fast Recovery Diode

文件：652.46 Kbytes Page：3 Pages

封装/外壳：D-67 包装：卷带（TR） 描述：DIODE GEN PURP 50V 100A D-67 分立半导体产品 二极管 - 整流器 - 单

Silicon Super Fast Recovery Diode

文件：652.46 Kbytes Page：3 Pages

Silicon Super Fast Recovery Diode

文件：342.71 Kbytes Page：3 Pages

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode a

POWER TRANSISTORS(20A,350-400V,175W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE 20 AMPERE POWER DARLINGTON TRANSISTORS 350-400 VOLTS 175 WATTS

20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup DiodeThe MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applicat

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

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