NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode a

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE 20 AMPERE POWER DARLINGTON TRANSISTORS 350-400 VOLTS 175 WATTS

POWER TRANSISTORS(20A,350-400V,175W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE 20 AMPERE POWER DARLINGTON TRANSISTORS 350-400 VOLTS 175 WATTS

20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup DiodeThe MJ10005 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applicat

NPN Silicon Power Darlington Transistor

Description The MJ10005 is a NPN silicon Darlington Power Transistor, designed for use in high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Features • With TO-3 packaging • Ver

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10004 and MJ10006 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ate

NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10004 and MJ10006 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ate

175W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

NPN SILICON POWER DARLINGTON TRANSISTORS

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

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Trans Darlington NPN 400V 20A 3-Pin(2+Tab) TO-3

isc Silicon NPN Darlington Power Transistor

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MICROWAVE POWER TRANSISTOR

The RF Line Microwave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW