20.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

SUPER FAST RECTIFIERS

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

HIGH EFFICIENCY RECTIFIERS

Feaures Glass passivated chip junctions High Forward Surge Capability High Speed recovery time for switching mode application Lead free in compliance with EU RoHS 2011/65/EU directive Low Reverse Current

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE GEN PURP 600V 20A ITO220AC 分立半导体产品 二极管 - 整流器 - 阵列

超快恢复二极管

Super Fast Recovery Power Rectifier

超快恢复二极管

SUPER FAST RECOVERY SILICON RECTIFIER

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High surge capability

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GLASS PASSIVATED SUPER RECTIFIER

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ULTRAFAST PLASTIC RECTIFIER

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20.0A GLASS PASSIVATED SUPER FAST RECTIFIER

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20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes

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20.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

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20.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

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Pneumatically operated 2/2-way angle seat valve with stainless steel actuator

The pneumatically operated angle seat valve with stainless steel actuators fulfils the demands of tough process environments. Unrivalled life time and sealing integrity is guaranteed by the trusted self-adjusting spindle sealing. The stainless steel actuator has been designed for tough applicat

Modular process valve cluster – distributor and collector

Type 8840 comes with ready to install modules of tried and tested Bürkert process valves. The valve cluster, based on a modular valve body, allows different configurations. The individual parts are joined hermetically tight and in a very compact way. No installation effort for pipework, fitting

N-Channel TrenchPowerMOSFET

General Description The 2060K.uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications. Features ● VDS=20V；ID=60A； RDS(ON)

Snap Bushings

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38-mm (1 1/2-inch) 10 stage, End-Window Photomultiplier

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