Glass Passivated Super Fast Rectifiers

Features ◆ Superfast switching time for hight efficiency ◆ Low reverse leakage current ◆ High surge capacity Mechanical Data ◆ Case: TO-220AB full molded plastic package ◆ Terminals: Lead solderable per MIL-STD-202, Method 208 ◆ Polarity: As marked ◆ Standard packaging: Any ◆ Weight: 0.08

Plastic Ultra-Fast Recover Rectifier Reverse Voltage 100 to 600 V Forward Current 8.0 A

Features • High Current Capability • Low Forward Voltage Drop • Low Power Loss, High Efficiency • Lead and body according with RoHS standard

GLASS PASSIVATED SUPER FAST RECTIFIERS

PRODUCT SUMMARY Reverse Voltage 50 to 600 Volts Foward Current 8.0 Amperes FEATURES Superfast switching time for hight efficiency Low reverse leakage current High surge capacity

DIODE:Fast Recovery (FRD, UFRD)

分立

8.0 Ampere Dual Common Cathode Ultra Fast Recovery Rectifier Diode

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Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 600 Volts , Forward Current 8.0 Ampers

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Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 600 Volts , Forward Current 8.0 Ampers

文件：239.37 Kbytes Page：3 Pages

Plastic Ultra-Fast Recover Rectifier

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8 Ampere Heatsink Dual Common Anode Fast Recovery Half Bridge Rectifiers

Features ✱ Latest GPP technology with super fast recovery time ✱ Low forward voltage drop ✱ High current capability ✱ Low reverse leakage current ✱ High surge current capability Application ✱ Automotive Inverters and Solar Inverters ✱ Plating Power Supply,SMPS,Motor Control and UPS ✱ Car

8.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Diode

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8.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers

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8.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers

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ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature