Ultra-Fast Recovery Diodes 60A FRED Pt

Features ● Adopt FRED chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical

60.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply

60.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply

60.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply

60.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply

Ultra Fast Recovery Diodes

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Ultra Fast Recovery Diodes

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Ultra Fast Recovery Diodes

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Ultrafast Recorvery Diode

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Ultra Fast Recovery Diodes

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120 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

Wiha Quality Tools Toll Free: (800) 494-6104

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ENGINEERS CUTTING TOOLS

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Flat surface combination pH electrode

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70 MHz Bandpass SAW Filter

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