Ultrafast Plastic Rectifier

FEATURES • Glass passivated pellet chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definit

Ultrafast Plastic Rectifier

FEATURES • Glass passivated pellet chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definit

Ultrafast Plastic Rectifier

FEATURES • Glass passivated pellet chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definit

Ultrafast Plastic Rectifier

FEATURES • Glass passivated pellet chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definit

Ultrafast Plastic Rectifier

FEATURES • Glass passivated pellet chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definit

封装/外壳：DO-201AD，轴向 包装：管件 描述：DIODE GEN PURP 200V 4A DO201AD 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-201AD，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 200V 4A DO201AD 分立半导体产品 二极管 - 整流器 - 单

Power MOSFET

VDS (V) 500 RDS(on) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Dynamic dV/dt Rating

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